| PART |
Description |
Maker |
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
| HFDOM40MRXXX DOM40MR032 |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式3.3 / 5.0V工作
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| H26M11001BAR |
1GB e-NAND
|
Hynix
|
| KBE00S009M-D411 |
1Gb NAND x 2 256Mb Mobile SDRAM x 2
|
Samsung Electronic
|
| KBE00S009M-D411 KBE00S009M |
From old datasheet system
1Gb NAND x 2 256Mb Mobile SDRAM x 2
|
SAMSUNG[Samsung semiconductor]
|
| KM29W8000IT |
1M x 8 Bit NAND Flash Memory(1M x 8 浣?NAND???瀛???ī
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| H27U518S2CTR-BC H27U518S2C |
512 Mbit (64 M x 8 bit) NAND Flash
512 Mb NAND Flash
|
Hynix Semiconductor
|
| TS1GMP630 TS2GMP630 TS4GMP630 |
1GB/2GB/4GB USB Flash Drive
|
Transcend Information. Inc.
|
| AT49F512-70TC AT49F512 AT49F512-70VC AT49F512-70VI |
Quadruple 2-Input Positive-NAND Gate 14-SOIC -40 to 125 64K X 8 FLASH 5V PROM, 90 ns, PDSO32
Quadruple 2-Input Positive-NAND Gate 14-SSOP -40 to 125 64K X 8 FLASH 5V PROM, 90 ns, PDIP32
512K 64K x 8 5-volt Only Flash Memory
|
Atmel, Corp.
PROM
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| HY27UF082G2A HY27UF162G2A HY27UF082G2A-TCB HY27UF0 |
2Gbit (256Mx8bit/128Mx16bit) NAND Flash
256M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
|
HYNIX SEMICONDUCTOR INC
|
| HFDOM40KRXXX DOM40KR0032 DOM40KR016 DOM40KR064 DOM |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
